Scalable SiC Power Switches for Applications in More Electric Vehicles (Preprint)

Abstract

SiC JFETs can be manufactured in three different conduction types; fully normally off (capable of blocking BVDS(max) at VGS = 0V), quasi-off (previously referred to as bias-enhanced capable of blocking half BVDS(max) at VGS = 0V)), and ?hard? normally on (unable to block any amount of voltage at VGS = 0V). There exists trade-offs between each of the three conduction types mostly evident in the forward current ratings and specific on resistance. Due to the structure of the device the normally on device yields the greatest forward current ratings and lowest on resistance. The quasi-off device that is design to block up to half of the maximum blocking capabilities at VGS = 0, typically results in 1.5x reduction in forward current with the normally off device demonstrating greater than 2x reduction in forward current ratings. Because of the large reduction in conduction current capabilities of the normally off device, the normally on and quasi-off devices are more strongly promoted.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2007
Accession Number
ADA470598

Entities

People

  • Douglas Seale
  • Janna Casady
  • Jeffrey B. Casady
  • Lin Cheng
  • Michael Mazzola
  • Robin Kelley
  • Volodymyr Bondarenko

Organizations

  • Mississippi State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Ceramic Materials
  • Circuits
  • Composite Materials
  • Compound Semiconductors
  • Electric Vehicles
  • Field Effect Transistors
  • Governments
  • Hybrid Electric Vehicles
  • Resistance
  • Semiconductors
  • Silicon Carbide
  • Standards
  • Temperature Coefficients
  • Trailing Edges
  • Vehicles

Readers

  • Coastal and Marine Engineering/Sediment Transport/Hydraulic Engineering
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology