Strain-free Ge/GeSiSn Quantum Cascade Lasers Based on L-Valley Intersubband Transitions
Abstract
The authors propose a Ge/Ge0.76Si0.19Sn0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a clean offset of 150 meV situated below other energy valleys Gamma and X. The entire structure is strain-free because the lattice-matched Ge and Ge0.76Si0.19Sn0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2007
- Accession Number
- ADA471348
Entities
People
- Greg Sun
- Hei Victor Cheng
- J. Khurgin
- J. Menéndez
- R. A. Soret
Organizations
- Air Force Research Laboratory