Laterally Coupled Buried Heterostructure High-Q Ring Resonators

Abstract

All-buried InP-InGaAsP ring resonators laterally coupled to bus waveguides are demonstrated. The buried configurations offer a lower built-in refractive index step along the resonator periphery, which affords enhanced optical coupling coefficients between the waveguides and reduced scattering losses caused by the resonator sidewall imperfections. Very low optical intensity attenuations of 0.4 /cm and coupling-limited quality factors of greater than 10(exp 5) are observed from 200- micrometers-radii ring resonators. The measured spectral linewidth is as narrow as 0.0145 nm.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2005
Accession Number
ADA471611

Entities

People

  • Kostadin Djordjev
  • Paul Daniel Dapkus
  • Qi Yang
  • Sang J. Choi
  • Seung J. Choi
  • Zhen Peng

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Coefficients
  • Couplings
  • Electrical Engineering
  • Electron Beam Lithography
  • Engineering
  • Heterojunctions
  • Laser Resonators
  • Losses
  • Materials
  • Refractive Index
  • Resonators
  • Scattering
  • Semiconductors
  • Signal Processing
  • Spectra
  • Waveguides

Fields of Study

  • Physics

Readers

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  • Semiconductor Device Technology