Semiconductor Based Transverse Bragg Resonance (TBR) Optical Amplifiers and Lasers
Abstract
We have fabricated electrically pumped, semiconductor TBR lasers in the InP/InGaAsP material system to demonstrate the efficiency gains possible by the incorporation of a transverse Bragg grating. By incorporating a transverse Bragg grating into a large-area laser, the optical modes of the laser can be designed to improve the efficiency compared to traditional index-guided lasers. The resulting transverse Bragg resonance (TBR) waveguide can be designed to have a single lateral mode that is distributed throughout the entire width of the laser for efficient, stable, single lateral mode operation even at high powers. In addition, by designing the dispersion of the TBR modes, we can increase the modal gain at the desired lasing frequencies for further efficiency improvements. We have finished some preliminary measurements of our laser samples and are currently working on optimizing the design for improved performance as well as more detailed measurement and characterization. Our initial findings indicate that the TBR laser may show efficiency gains compared to traditional broad-area lasers. We also have designed, fabricated and characterized two dimensional TBR lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 14, 2007
- Accession Number
- ADA472485
Entities
People
- Amnon Yariv
Organizations
- California Institute of Technology