Surface Analysis of Reactive Ion Etched PZT Thin Films in SF6 Plasma

Abstract

Reactive ion etching of sol-gel deposited Pb(Zr(0.52) Ti(0.48)03 thin films was performed in SF6 plasmas. Etch rate was determined as a function of cathode power and chamber pressure, attaining a value of 65 nm/min at 300 W. Auger electron spectroscopy measurements revealed an excess Pb 10 nm thin layer on as-deposited film surfaces. X -ray photoelectron spectroscopy measurements showed the existence of ZrF4 and PbS04 species on etched surfaces, in addition to traces of S and F. These measurements also indicated that Ti is relatively easy to remove while Pb removal is the rate limiting step in the etch process.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2007
Accession Number
ADA472738

Entities

People

  • Eugene S. Zakar

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Compounds
  • Chemical Reactions
  • Chemistry
  • Electron Spectroscopy
  • Etching
  • Fabrication
  • Films
  • Manufacturing
  • Materials
  • Measurement
  • Microelectromechanical Systems
  • Spectroscopy
  • Surface Analysis
  • Thin Films
  • X Ray Photoelectron Spectroscopy

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Surface Engineering/Surface Coating Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene