GaN/AlGaN Terahertz Quantum Cascade Laser

Abstract

The quantum-cascade laser (QCL) has, since its first realization, demonstrated an impressive and rapid development, extending the emission wavelengths from midinfrared to terahertz spectral range. However, QCLs based on GaAs/AlGaAs and AlInAs/GaInAs are not capable of emitting in the energy range around the LO-phonon energies (ELO~36 meV in GaAs and ELO~34 meV in InGaAs), leaving a gap in the spectral scale between 30 and 40 μm. This can be overcome by using GaN/AlGaN material. The GaN based QCL has many advantages over the GaAs QCL. These include larger LO-phonon energy (ELO~90 meV), very fast carrier dynamics, far infrared emission wavelengths (> 40 μm), and room temperature operation capability. Therefore it has been considered the most desirable candidate for far infrared intersubband emission laser.

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Document Details

Document Type
Technical Report
Publication Date
Oct 07, 2005
Accession Number
ADA473040

Entities

People

  • S. C. Wang

Organizations

  • National Chiao Tung University

Tags

Communities of Interest

  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Band Gaps
  • Cascade Structures
  • Diffraction
  • Electron Microscopes
  • Energy Bands
  • Energy Gaps
  • High Resolution
  • Lasers
  • Materials
  • Microscopes
  • Microscopy
  • Physics
  • Quantum Cascade Lasers
  • Quantum Wells
  • Surface Roughness
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Quantum Computing