Slow Light and Adiabatic Bandwidth Variation in Semiconductor Nanostructures

Abstract

We have demonstrated a mechanism of tunable optical delay that takes advantage of the strong Coulomb interactions between excitons and free carriers and uses optical injection of free carriers to broaden and bleach an exciton absorption resonance. Fractional delay exceeding 200% has been obtained for an 8 ps optical pulse propagating near the heavy-hole excitonic transition in a GaAs quantum well (QW). We have also developed a scheme of using trions in mixed-type QW to realize a lamda-type three- level system for electron spin coherence in semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Feb 23, 2007
Accession Number
ADA473062

Entities

People

  • Hailin Wang

Organizations

  • University of Oregon

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Bandwidth
  • Electronics
  • Electrons
  • Energy Bands
  • Excitons
  • Frequency
  • Group Velocity
  • Materials
  • Nanomaterials
  • Nanostructures
  • Quantum Electronics
  • Quantum Wells
  • Resonance
  • Scientists
  • Semiconductors
  • Transitions

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing