Growth and Characterization of Low Density InAs/GaAs Quantum Dots for Quantum Information Processes

Abstract

The work demonstrated growth of low density QDs and optimized of growth parameters for low density In"Ga"As/GaAs QDs with enhanced molecular beam epitaxy "MEMBE". The work also included characterization of wetting layer in low density QDs with a macro-PL measurement and development of -PL measurement for a single QD spectroscopy at low temperature ~ 4 K.

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Document Details

Document Type
Technical Report
Publication Date
May 12, 2007
Accession Number
ADA473084

Entities

People

  • Won J. Choi

Organizations

  • Korea Institute of Science and Technology

Tags

DTIC Thesaurus Topics

  • Crystals
  • Epitaxial Growth
  • Ground State
  • Low Density
  • Low Temperature
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Computing
  • Quantum Cryptography
  • Quantum Dots
  • Quantum Information
  • Semiconductor Devices
  • Semiconductors
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing