Nanocomposite Gate Dielectrics With Nanoparticles for Organic Thin Film Transistors
Abstract
To overcome conventional organic thin film transistors (OTFTs) associated with high operating voltage due to the low charge carrier mobility of organic semiconductors, this work implements high dielectric constant gate insulators for enhancing field-induced carrier density. For the high dielectric constant material, the work investigates nanocomposite films that consists of cross-linked poly-4-vinyl phenol (PVP) and (Ba,Sr)TiO3 (Barium strontium titanate; BST).
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 15, 2006
- Accession Number
- ADA473096
Entities
People
- Chan E. Park
Organizations
- Pohang University of Science and Technology