Development of Highly Ordered Heterostructured Semiconductor Nanowire Arrays for Sub-Wavelength Optical Devices
Abstract
Methodology for efficient growth of semiconductor nanowires of several Il-VI (ZnSe, ZnO, znS) and III-VI (GaAs, InSb) nanowires was developed and optimized. Based on optical and transport characterization measurements, defect states responsible for quenching of band-edge luminescence were identified and post-growth treatments were devised to eliminate those defects and to achieve strong excitonic emission. Carrier trapping dynamics was elucidated by ultrafast time-resolved optical pump-probe measurements. Optimized ZnSe nanowires were shown to exhibit an exceptionally high photoconductive response of 22A/W in a single nanowire transistor device. Manganese doped ZnO nanowires were fabricated and above room temperature ferromagnetism was achieved. Transport measurements showed these wires to be n-type with a degenerate carrier distribution. The experimental efforts were supplemented by modeling that included design of high Q-factor nanowire array photonic cavities using as well as a theory of excitons in nanowires.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2007
- Accession Number
- ADA473573
Entities
People
- Harry Ruda
- Selvakumar Nair
Organizations
- University of Toronto