A Nanocrystallite Si based Metal-Semiconductor-Metal Photosensors and Solar Energy Transformers with Enhanced Responsivity at UV-blue Wavelengths

Abstract

Structural damage enhanced near-infrared electroluminescence (EL) of a metal-oxide-semiconductor light emitting diode (MOSLED) made on SiOx film with buried nanocrystallite Si after CO2 laser rapid-thermal-annealing (RTA) at an optimized intensity of 6 kW/cm2 for 1 ms is demonstrated. CO2 laser RTA induced oxygen-related defects are capable of improving Fowler-Nordheim tunneling mechanism of carriers at metal/SiOx interface. The CO2 laser RTA SiOx film reduces Fowler-Nordheim tunneling threshold to 1.8 MV/cm, facilitating an enhanced EL power of an ITO/ SiOx/p-Si/Al MOSLED up to 50 nW at a current density of 2.3 mA/cm2

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Document Details

Document Type
Technical Report
Publication Date
Dec 05, 2007
Accession Number
ADA474748

Entities

People

  • Gong-ru Lin

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbon Dioxide Lasers
  • Chemical Vapor Deposition
  • Electric Fields
  • Electro-Optics
  • Energy
  • Heat Treatment
  • Laser Beams
  • Lasers
  • Light Emitting Diodes
  • Materials Processing
  • Materials Science
  • Metal Oxide Semiconductors
  • Optical Lattices
  • Optical Materials
  • Optics
  • Oxides
  • Semiconductors

Fields of Study

  • Engineering

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics