Performance Optimization of Fe-Based Light Emitting Diodes

Abstract

We have evaluated the performance of a new type of Fe spin-LED in which recombination takes place in InAs monolayers grown at the intrinsic region of an n-i-p AlGaAs(n)/GaAs(i)/AlGaAs(p) diode. The intrinsic region is a wide GaAs quantum well. The InAs layer is known as the "wetting layer" (WL). The new WL spin-LEDs were found to have the same high circular polarization as the more conventional Fe spin-LEDs , but differ in one very important aspect: They are one order of magnitude brighter than their conventional counterparts. As a result, the WL spin-LEDs function reliably at room temperature (the conventional spin-LEDs don't).

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Document Details

Document Type
Technical Report
Publication Date
Dec 10, 2007
Accession Number
ADA474808

Entities

People

  • Athos Petrou

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Band Structures
  • Circular Polarization
  • Contracts
  • Diodes
  • Electrons
  • Heterojunctions
  • Light Emitting Diodes
  • Magnetic Fields
  • Optical Pumping
  • Optimization
  • Polarization
  • Quantum Dots
  • Quantum Properties
  • Quantum Wells

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing
  • Quantum Science - Quantum Dots