Photoexcited-Carrier-Induced Refractive-Index Change in Small Band-Gap Semiconductors (Preprint)

Abstract

Using accurate band structures of InAs, InSb, and two Hg1-xCdxTe alloys, we calculate the change in refractive index caused by the photoexcited electrons and holes. The effect of both free-carrier absorption (FCA) and one-photon absorption are considered. We find that the change in refractive index varies nonlinearly with the density of photoexcited carriers and that the generally neglected FCA contribution is significant in InAs, owing to its weak spin-orbit coupling.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2006
Accession Number
ADA475006

Entities

People

  • Shekhar Guha
  • Siddhartha Krishnamurthy
  • Zhi-Gang

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Conduction Bands
  • Couplings
  • Electron Holes
  • Electrons
  • Energy Bands
  • Governments
  • Materials
  • Refractive Index
  • Semiconductors
  • Spin-Orbit Interaction
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Space