Reducing Film Thickness in Lead Zirconate Titanate Thin Film Capacitors

Abstract

The goal of this project is to characterize the dielectric and ferroelectric performance of lead zirconate titanate (PZT) thin film capacitors as a function of film thickness and sol-gel solution composition. For the thickness experiments, the underlying silicon dioxide, platinum electrode, and the spin-deposited PZT thicknesses were varied. For the solution tests, the molarity and the zirconium/titanium ratio was also varied. In addition, PZT spin rate was varied to determine the spin rate's effect on PZT thickness and dielectric and ferroelectric properties. Both capacitance and hysteresis data were taken for all samples. This project will aid the Defense Advanced Research Projects Agency (DARPA) nanoelectromechanical switch (NEMS) program by investigating avenues of reducing film thickness while maintaining acceptable levels of performance.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2007
Accession Number
ADA475049

Entities

People

  • Ronald G. Polcawich
  • Vikram Rao

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Capacitors
  • Complementary Metal-Oxide Semiconductors
  • Dielectric Permittivity
  • Electric Fields
  • Electrodes
  • Films
  • Hysteresis
  • Lead Zirconate Titanates
  • Materials
  • Metals
  • Nanoelectromechanical Systems
  • Silicon Dioxide
  • Thin Film Capacitors
  • Thin Films
  • Titanates
  • Zirconates

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems