Electrical, Structural, and Optical Properties of Cr-Doped and Non-Stoichiometric V2O3 Thin Films (Preprint)

Abstract

V2O3 films and Cr-doped V2O3 films were grown on (0001) (C-plane) and (1120) (plane) oriented sapphire substrates by the reduction of sol-gel derived vanadium oxide films. Examination by x-ray diffraction, SEM, TEM, and atomic force microscopy showed the films to be comprised of highly oriented grains. Optical transmission and dc resistivity measurements revealed phase transitions characteristic of the single crystal V2O3 and Cr-doped V2O3. Subsequent anneals of the un-doped films under controlled oxygen atmospheres yielded non-stoichiometric films with metal-insulator transitions characteristic of annealed V2O3 single crystals.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2006
Accession Number
ADA475050

Entities

People

  • Elliott Slamovich
  • Jacob O. Barnes
  • Jurgen M. Honig
  • Leonel P. Gonzalez
  • Patricia A. Metcalf
  • Shekhar Guha

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Crystals
  • Films
  • Materials
  • Measurement
  • Metal-Insulator Transitions
  • Microscopy
  • Optical Properties
  • Phase Diagrams
  • Phase Transformations
  • Single Crystals
  • Thin Films
  • Transition Temperature
  • Transitions
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene