Electrical, Structural, and Optical Properties of CR-Doped and Non-Stoichiometric V2O3 Thin Films (Postprint)
Abstract
Using accurate band structures of InAs, InSb, and two Hg1-xCdxTe alloys, we calculate the change in refractive index caused by the photoexcited electrons and holes. The effects of both free-carrier absorption (FCA) and one-photon absorption are considered. We find that the change in refractive index varies nonlinearly with the density of photoexcited carriers and that the generally neglected FCA contribution is significant in InAs, owing to its weak spin-orbit coupling. V2O3 films and Cr-doped V2O3 films were grown on (0 0 0 1) (C-plane) and (1 1 2 0) (A-plane) oriented sapphire substrates by the reduction of sol-gel derived vanadium oxide films. Examination by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and atomic force microscopy showed the films to be comprised of highly oriented grains. Optical transmission and resistivity measurements revealed phase transitions characteristic of the single crystal V2O3 and Cr-doped V2O3. Subsequent anneals of the un-doped films under controlled oxygen atmospheres yielded non-stoichiometric films with metal-insulator transitions characteristic of annealed V2O3 single crystals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2006
- Accession Number
- ADA475197
Entities
People
- Elliott B. Slamovich
- Jacob O. Barnes
- Jurgen M. Honig
- Leonel P. Gonzalez
- Patricia A. Metcalf
- Shekhar Guha
Organizations
- Air Force Research Laboratory