Photoexcited-Carrier-Induced Refractive Index Change in Small Bandgap Semiconductors (POSTPRINT)

Abstract

Using accurate band structures of InAs, InSb, and two Hg(1-x)CdxTe alloys, we calculate the change in refractive index caused by the photoexcited electrons and holes. The effects of both free-carrier absorption (FCA) and one-photon absorption are considered. We find that the change in refractive index varies nonlinearly with the density of photoexcited carriers and that the generally neglected FCA contribution is significant in InAs, owing to its weak spin-orbit coupling.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2006
Accession Number
ADA475363

Entities

People

  • Shekhar Guha
  • Srini Krishnamurthy
  • Zhi-Gang

Organizations

  • SRI International

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Band Gaps
  • Band Structures
  • Charge Carriers
  • Conduction Bands
  • Electrons
  • Energy Bands
  • Governments
  • Materials
  • Optical Properties
  • Refractive Index
  • Semiconductors
  • Spin-Orbit Interaction
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Space