Comparison of Gallium Nitride High Electron Mobility Transistors Modeling in Two and Three Dimensions

Abstract

This thesis looks at modeling Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Semiconductors. The GaN device has potential future military use in the high power and high frequency operation replacing costly millimeter wave tubes This would affect military radar systems, electronic surveillance systems, communications systems and high voltage power systems by providing smaller and more reliable devices to drive operation This thesis looks at using diamond substrate to improve the then%al management of a HEMT device over that of a sapphire substrate The improved then%al management should lead to improved operating characteristics and reliability The HEMT device was modeled using Silvaco software package and compared to an actual device on sapphire substrate The results of the software model showed the improved thermal characteristics of the HEMT device on the diamond substrate over that of the sapphire.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2007
Accession Number
ADA475972

Entities

People

  • William A. Gibson

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electromagnetic Fields
  • Electron Mobility
  • Electronics
  • Electronics Industry
  • Electrons
  • Fermi Levels
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Power Electronics
  • Radar
  • Radio Frequency
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Transistors

Fields of Study

  • Engineering

Readers

  • Semiconductor Device Technology
  • Software Engineering.

Technology Areas

  • 5G
  • 5G - Internet of Things
  • Microelectronics