Theoretical Study of Defect Signatures in III-V and II-VI Semiconductors

Abstract

The study of defects in III-V and ZnO semiconductors was accomplished using ultrasoft pseudopotential (USPP) method. For that, a numerical approach was also implemented to calculate isotropic hyperfine-parameters for isolated defects based on a supercell method.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2006
Accession Number
ADA476175

Entities

People

  • Sukit Limpijumnong

Organizations

  • Suranaree University of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Band Gaps
  • Chemical Vapor Deposition
  • Chemistry
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Density Functional Theory
  • Energy Bands
  • Fermi Levels
  • Mass Spectrometry
  • Molecular Dynamics
  • Optical Properties
  • Point Defects
  • Quantum Properties
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Computational Fluid Dynamics (CFD)
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics