Advanced TEM Sample Preparation Using Low Energy (Preprint)
Abstract
The recent advent and availability of aberration-corrected (S)TEM instruments means that more information about samples are visible, and important aspects of their chemistry, atom locations, surface properties, and microstructure are quantifiable in both 2D and 3D. Surface damage and unintended ion implanted layers incurred during ion beam-assisted TEM sample preparation are being more deeply recognized as artifacts limiting the information that can be obtained using analytical electron microscopy. Both the quality and quantity of scientific and technological results are impacted by artifacts because deleterious surface layers are often a significant fraction of total sample thickness, and also because more samples of more materials are being made by ion beam-assisted techniques. After initially being prepared using conventional broad-beam or focused ion-beam assisted milling, samples that have been post-processed with low voltage Ar ion beams show significant reductions in surface amorphous layer thickness, and also alteration of implanted Ga layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2007
- Accession Number
- ADA476321
Entities
People
- F. J. Scheltens
- Iv. Wheeler R.
- K. Mahalingam
Organizations
- Universal Energy Systems