Photonic Crystals in Silicon via Growth and Preferential Oxidation

Abstract

Si, SiGe, and Ge nanomembrances offer a much more powerful paradigm for the development of silicon optoelectronics overall, not just PCs. Hence explore SiNM fabrication process as a more versatele apporach to Ge-based PCs. Develop membrance processingl release/transfer this is a major topic, as there are many parameters that can be modified. Develop membrane stacking procedures again, these depend on the release and transfer protocols, optimize ways to do this. Characterize Bragg mirrors and simple Si-based PC work with SiNMs. Develop processing ideas for 3D Si-based PCs. Develop contract technology. Develop a theoretical understanding of the relationship of complex index of refraction and charge in SiNMs. Investigate local (from atomic to <lOOnm) atomic transport, relaxation kinetics, and defect generation at the oxide-Si interface in SOl.

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Document Details

Document Type
Technical Report
Publication Date
Jan 02, 2007
Accession Number
ADA477102

Entities

People

  • M. G. Lagally

Organizations

  • University of Wisconsin–Madison

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Crystals
  • Electrical Properties
  • Energy Bands
  • Fabrication
  • Materials
  • Membranes
  • Optics
  • Optoelectronics
  • Oxidation
  • Oxides
  • Photonic Crystals
  • Physics
  • Refraction
  • Refractive Index
  • Semiconductors

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene