1677V, 5.7 mohm.cm2 4H-SiC Bipolar Junction Transistors

Abstract

This paper reports the development of high power 4H-SiC bipolar junction transistors (BJT) with both high blocking voltage and low specific on-resistance (Rsp_on). A single BJT cell with an active area of 0.61 mm(2) blocks up to Vceo = 1677 V and conducts up to 3.2 A (Jc=525 A/cm2) at a forward voltage drop of V(CE) = 3.0V, corresponding to a Rsp, on of 5.7 mOmega.cm2. In 4H-SiC BJT research, this BJT set a record high value of V(BR)2 / R(SP)_ON of 500 MW/cm(2).

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Document Details

Document Type
Technical Report
Publication Date
Nov 10, 2004
Accession Number
ADA477801

Entities

People

  • Jiahui Zhang
  • Jian H. Zhao
  • Petre Alexandrov
  • Terry Burke

Organizations

  • Rutgers School of Engineering

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Elements
  • Information Operations
  • New Brunswick
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors

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