Thermal Characterization of Thin Films for MEMS Applications
Abstract
Thin film dielectrics play an important role in the fabrication and processes involved with microelectromechanical systems (MEMS). Two such dielectrics that are used widely are silicon dioxide (SiO2) and photoresist. As a large portion of these systems use the conduction of heat through SiO2 and photoresist layers, the thermal conductivity of these materials is crucial. In this work, the thermal conductivities of the above mentioned materials were determined using a micro-mesa test structure consisting of the dielectric to be measured sandwiched between two resistive temperature detectors, one acting as a heater. At near room temperature, the thermal conductivity of thin-film PECVD silicon dioxide was determined to be 1.06 Wm(-1)K(-1), similar to known bulk values for SiO2. The thermal conductivity of photoresist measured around room temperature was determined to be 0.31 Wm(-1)K(-1). Multiple film thicknesses were tested with these structures to account for interface effects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2008
- Accession Number
- ADA478358
Entities
People
- Brian Morgan
- David J. Howe
Organizations
- United States Army Research Laboratory