Two-Dimensional Electron Gas in Strained Silicon for Studying Ultra-Low Energy Electronic Processes
Abstract
The proposed research focuses on the fabrication of high mobility 2D electron gases or low density for the understanding of correlated electron behavior under extreme conditions: low temperature and high magnetic field. The experimental efforts are in 3 related topics: (1) fabricate 2DES in strained Si with the highest achievable electron mobility; (2) fabricate 2DES in strained Si with low electron density; and (3) explore alternative approaches for fabricating strained Si without the relaxed buffer layer that is heavily dislocated and therefore causing strain undulation in the Si channel. Significant progress has been made in carrier mobility and the fabrication of strained films using porous Si. We have gained the ability to reproducibly fabricate 2DES samples with mobility above 300,000 cm2/V-s. By controlled oxidation of porous Si, we have obtained strained films with up to 0.8% tensile strain, suitable for 2DES transport research without ever introducing dislocations. The outcome of our research has led to significant advancement in our ability of fabricating high quality samples for the understanding of correlated electron behavior.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 10, 2008
- Accession Number
- ADA479239
Entities
People
- Daniel Tsui
- Ya-Hong Xie
Organizations
- University of California, Los Angeles