Determination of Semiconductor Junction Vulnerability to Second Breakdown
Abstract
A comprehensive numerical diode model for simulation of thermal second breakdown is developed. The model features one-dimensional electrical effects and simplified two-dimensional thermal conduction along with thermally dependent semiconductor parameters. Four, coupled, nonlinear, partial differential equations which consist of the hole and electron continuity equations, the Poisson equation and the energy balance equation characterize the model. These equations are solved simultaneously for mobile hole and electron concentrations, electric field, and temperature as functions of time and position. A contact-to-contact transient simulation with realistic terminal boundary conditions and a constant temperature substrate is performed. Investigations with the numerical model have led to several conclusions with respect to thermal second breakdown. First, it is observed that junction inhomogeneities, current constrictions and variable perturbations, through various mechanisms, are not required to initiate and support thermal second breakdown. Second, the simulation results support the theory that thermal second breakdown is primarily a consequence of the diode leakage current temperature dependence. Third, under appropriate conditions the thermal second breakdown transition results in all but a total collapse of the junction voltage without the benefit of a melt filament.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1977
- Accession Number
- ADA479406
Entities
People
- Wayne H. Causey
- Wilford D. Raburn
Organizations
- University of Alabama