Ultrafast Spectroscopy of Mid-Infrared Semiconductors Using the Signal and Idler Beams of a Synchronous Optical Parametric Oscillator

Abstract

The objective of this thesis was to improve the procedure for taking ultrafast, time-resolved measurements of photoluminescence from MWIR semiconductors. Previous work has used a mode-locked titanium sapphire (Ti:Saph)laser to excite the semiconductor sample and to upconvert the photoluminescence from the semiconductor. Work completed in this thesis improved on the techniques developed during previous work.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2008
Accession Number
ADA481054

Entities

People

  • Richard M. Derbis

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Threat Infrared Countermeasures
  • Air Force
  • Band Gaps
  • Detection
  • Energy Bands
  • Energy Levels
  • Fermi Levels
  • Laser Beams
  • Lasers
  • Nonlinear Optics
  • Optical Materials
  • Optics
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Spectroscopy
  • Surface To Air Missiles

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics