Surface Passivation of InAs(001) With Thioacetamide

Abstract

We describe the passivation of InAs(001) surfaces with thioacetamide (CH3CSNH2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide (NH4)2Sx. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2005
Accession Number
ADA481123

Entities

People

  • D. Y. Petrovykh
  • J. P. Long
  • Lloyd J. Whitman

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Boiling Point
  • Chemistry
  • Chlorides
  • Copyrights
  • Electron Density
  • Electron Energy
  • Electrons
  • Emission
  • Energy
  • Energy Bands
  • High Resolution
  • Military Research
  • Photoelectrons
  • Physics
  • Semiconductor Devices
  • Semiconductors
  • X Rays

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Electrochemical Surface Science
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene