Very-Loong Wave Ternary Antimonide Superlattice Photodiode With 21 Micrometers Cutoff

Abstract

We describe a ternary antimonide superlattice photodiode with a 21 micrometers cutoff wavelength. The active region consists of 150 periods of 10 monolayers (MLs) of In0.07Ga0.93Sb and 19 MLs of InAs with InSb-like interfacial bonds. The device has a detectivity of 3 * 10(exp 9)cm/Hz/W, dynamic impedance-area product of 0.18 omega sq cm, and peak external quantum efficiency of 3% at 40 K. X-ray diffraction and cross-sectional scanning tunneling microscopy show the structure to have a high degree of order with abrupt interfaces. A simulation of the absorption spectrum effectively reproduces the observed spectrum.

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Document Details

Document Type
Technical Report
Publication Date
Jun 23, 2003
Accession Number
ADA481131

Entities

People

  • Brian R. Bennett
  • E. H. Aifer
  • Eric M. Jackson
  • G. Boishin
  • I. Vurgaftman
  • J. R. Meyer
  • James C. Culbertson
  • Lloyd J. Whitman

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Absorption Spectra
  • Antimonides
  • Band Structures
  • Crystal Lattices
  • Diffraction
  • Diodes
  • Efficiency
  • Electrons
  • Energy Bands
  • Measurement
  • Photodiodes
  • Quantum Efficiency
  • Simulations
  • Spectra
  • Superlattices

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition
  • Quantum Computing