Engineering Electron and Hole Tunneling With Asymmetric InAs Quantum Dot Molecules
Abstract
Most self-assembled quantum dot molecules are intrinsically asymmetric with inequivalent dots resulting from imperfect control of crystal growth. The authors have grown vertically aligned pairs of InAs/GaAs quantum dots by molecular beam epitaxy, introducing intentional asymmetry that limits the influence of intrinsic growth fluctuations and allows selective tunneling of electrons or holes. They present a systemic investigation of tunneling energies over a wide range of interdot barrier thickness. The concepts discussed here provide an important tool for the systematic design and characterization of more complicated quantum dot nanostructures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2006
- Accession Number
- ADA481134
Entities
People
- Allan S. Bracker
- D. Gammon
- E. A. Stinaff
- I. V. Ponomarev
- J. C. Kim
- Lloyd J. Whitman
- M. F. Doty
- M. Scheibner
- Thomas L. Reinecke
Organizations
- United States Naval Research Laboratory