Ferromagnetic GaSb/Mn Digital Alloys

Abstract

In order to realize spintronic devices in narrow-gap semiconductors, we have carried out studies on the well-known InAs/GaSb-based materials and structures. As a key component to such devices, GaSb/Mn digital alloys were successfully grown by molecular beam epitaxy. Good crystal quality was observed with transmission electron microscopy showing well-resolved Mn-containing layers and no evidence of 3D MnSb precipitates in as-grown samples. Ferromagnetism was observed in GaSb/Mn digital alloys with temperature-dependent hysteresis loops in magnetization up to 400 K (limited by the experimental setup). Magnetotransport studies were also carried out, both in the conventional Hall-bar configuration, and on gated Hall-bar structures. Both anomalous Hall effect and tunable ferromagnetism with applied gate bias were investigated. Annealing studies of the digital alloys reveal evidence of migration of Mn atoms at elevated temperatures.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2004
Accession Number
ADA481140

Entities

People

  • B. D. McCombe
  • G. B. Kim
  • Hao Luo
  • M. Cheon
  • M. Na
  • Shuo Wang
  • T. Wojtowicz
  • X. Liu
  • Xi Chen
  • Y. Sasaki

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Annealing
  • Band Structures
  • Charge Carriers
  • Curie Temperature
  • Electron Microscopy
  • Electrons
  • Ferromagnetism
  • High Temperature
  • Low Temperature
  • Magnetic Fields
  • Magnetic Properties
  • Magnetization
  • Magnetometers
  • Materials
  • Microscopy
  • Semiconductors
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics