Evolution of GaSb epitaxy on GaAs(001)-c(4 x 4)

Abstract

The growth of GaSb films by molecular beam epitaxy on GaAs(001)-c(434) at 490 C has been studied in situ with scanning tunneling microscopy and ex situ with transmission electron microscopy. As the film is deposited, four distinct growth regimes are observed: the first two monolayers grow layer by layer with platelet-like two-dimensional (2D) islands; the next monolayer forms coherently strained three-dimensional (3D) quantum dots; further deposition induces film relaxation and rough 3D growth; for film thicknesses .100 nm the growth is again 2D, proceeding via spiral growth around emerging threading dislocations. The atomic-scale mechanisms inherent in the transitions between the growth regimes are discussed. Variations in growth procedures aimed at improving the quantum dot uniformity and reducing the dislocation density are proposed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 22, 1996
Accession Number
ADA481141

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • Lloyd J. Whitman
  • M. E. Twigg
  • P. M. Thibado

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • Gray Scale
  • Microscopy
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monomolecular Films
  • Personal Information Managers
  • Quantum Dots
  • Semiconductors
  • Thick Films
  • Three Dimensional
  • Transitions
  • Transmission Electron Microscopy
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing