Origins of Interfacial Disorder in GaSb/InAs Superlattices

Abstract

The interface surfaces of short-period GaSb/InAs superlattices grown by molecular beam epitaxy have been studied in situ with scanning tunneling microscopy. Migration enhanced epitaxy was used at the interfaces in order to control bond type. Interfaces on GaSb(001) are found to be smoother than those on strained InAs(001), and the InSb-like interfaces are smoother than GaAs-like ones. The primary source of disorder at these interfaces appears to be the kinetically determined topography of the growth surfaces, with intermixing playing a secondary role.

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Document Details

Document Type
Technical Report
Publication Date
Dec 11, 1995
Accession Number
ADA481245

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • Lloyd J. Whitman
  • M. E. Twigg
  • P. M. Thibado

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Crystal Lattices
  • Detectors
  • Diffraction
  • Diseases And Disorders
  • Epitaxial Growth
  • High Resolution
  • Infrared Detectors
  • Military Research
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monomolecular Films
  • Optical Properties
  • Roughness
  • Superlattices
  • X Rays

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.