Interfacial Disorder in InAs/GaSb Superlattices
Abstract
We have addressed the question of interfacial disorder in InAs/GaSb superlattices (SLs) grown by molecular-beam epitaxy using high-resolution transmission electron microscopy, Raman spectroscopy, X-ray diffraction, and in-situ scanning tunnelling microscopy (STM). Our analysis indicates that InSblike interfaces have a roughness of 1 monolayer (ML), for a SL grown on a GaSb buffer layer. For GaAs-like interfaces, however, the interface roughness is found to be 2 ML when the SL is grown on a GaSb buffer. For SLs grown on an InAs buffer, the roughness of GaAs-like interfaces (3ML) is also greater than that of InSb-like interfaces (2ML). These results suggest two general observations. The first is that GaAs-like interfaces are rougher than InSb-like interfaces. This difference may be due to the high surface energy of GaAs compared with InSb or to differences in surface kinetics. These observations are supported by in-situ STM results showing that the growth front surface morphology, for both GaSb and InAs layers, is rougher for GaAs-like interfaces than for InSb-like interfaces. We have also found that interface roughness is greater for an InAs/GaSb SL grown on an InAs buffer layer than for the same SL grown on a GaSb buffer layer. This difference in interface roughness may arise because InAs SL layers are in tension when grown on a GaSb buffer layer, whereas GaSb SL layers are under compression when grown on an InAs buffer layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1998
- Accession Number
- ADA481247
Entities
People
- Benjamin V. Shanabrook
- Brian R. Bennett
- Lloyd J. Whitman
- M. E. Twigg
- P. M. Thibado
Organizations
- United States Naval Research Laboratory