Wide Bandgap Superlattice Power Devices for Army Hybrid Electric Power Systems

Abstract

The size, eight, performance and thermal management of hybrid-electric power systems are limited by the performance of available silicon power devices. Potential improvements afforded by wide bandgap silicon carbide devices have been confirmed in Army programs, but the commercially available material severely limits performances. Superlattice silicon carbide material addresses the key limitations of this material; quality, size, cost, and incompatibility with silicon processing. Wide bandgap superlattice silicon carbide material has recently been grown on 4-inch diameter silicon substrates by NanoDynamics-88, Inc/C9 Corp.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2006
Accession Number
ADA481406

Entities

People

  • C. G. Wang
  • D. Weidenheimer
  • G. Khalil
  • J. White
  • K. Donegan
  • T. Burke

Organizations

  • United States Army Tank Automotive Research, Development and Engineering Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Directed Energy Weapons
  • Electric Power
  • Electric Vehicles
  • Electronics Industry
  • Engineered Materials
  • Fabrication
  • Field Effect Transistors
  • Low Temperature
  • Power Converters
  • Power Electronics
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Semiconductor Device Technology
  • Systems Analysis and Design