Performance Limiting Defects in SiC Based Transistors

Abstract

We have combined very sensitive electron paramagnetic resonance measurements and electrical measurements to identify performance limiting defects in SiC based semiconductor devices. This work is relevant to the US Army because SiC based devices offer quite significant potential advantages for high power and high temperature electronics.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2006
Accession Number
ADA481777

Entities

People

  • Aivars J. Lelis
  • C. J. Cochrane
  • M. S. Dautrich
  • Patrick M. Lenahan

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Bipolar Junction Transistors
  • Ceramic Materials
  • Charge Carriers
  • Electrical Measurement
  • Electron Paramagnetic Resonance
  • Electron Spin Resonance
  • High Temperature
  • Magnetic Fields
  • Magnetic Resonance
  • Materials
  • Measurement
  • Paramagnetic Resonance
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics