Evaluation of SiC VJFET Devices for Scalable Solid-State Circuit Breakers

Abstract

Power electronic converters functioning as components in high power systems, such as those of hybrid military ground vehicles require fast fault isolation, and in most cases benefit additionally from bi-directional fault isolation. To prevent converter damage or failure, fault current interrupt speeds in the hundreds of microseconds to few millisecond range are necessary. Presently used mechanical contractors do not provide adequate actuation speeds, and suffer severe degradation during repeated fault isolation. Instead, it is desired to use a large array of semiconductor devices having a collectively low conduction loss to provide large current handling capability and fast transition speed for current interruption. This report discusses the use of SiC MOSFETs and the evaluation of SiC JFETs for a bi-directional solid-state circuit breaker application.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2008
Accession Number
ADA481819

Entities

People

  • Damian P. Urciuoli

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuit Breakers
  • Compound Semiconductors
  • Converters
  • Diodes
  • Directional
  • Electronics
  • Ground Vehicles
  • Microsecond Time
  • Military Research
  • Power Electronics
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • Test And Evaluation
  • Transitions

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Fault Tolerant Diagnosis of Black and White Balloon Isolation Tests Using ¥.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems