Spin-Valve Effect in a Ni-C60-Ni Device

Abstract

We present here the results of theoretical calculations on the spin-valve effect in a Ni-C60-Ni device. The magnitude of the junction magnetoresistance (JMR) is found to be significantly large for the device, which makes it a promising candidate for realistic applications in molecular spintronics. The exploration of the origin of the observed spin-valve effect in the Ni-C60-Ni system will be discussed.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2006
Accession Number
ADA481944

Entities

People

  • Haiying He
  • Ravindra Pandey
  • Shashi P Karna

Organizations

  • Michigan Technological University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Abstracts
  • Atoms
  • Band Gaps
  • Density Functional Theory
  • Electronics
  • Energy Levels
  • Ferromagnetic Materials
  • Fullerenes
  • Magnetic Detectors
  • Magnetic Fields
  • Magnetoresistance
  • Military Research
  • Molecules
  • Resistance
  • Scattering
  • Spintronics
  • Transport Properties

Fields of Study

  • Physics

Readers

  • Neural Network Machine Learning.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics