Stranski-Krastanov Growth of InSb, GaSb, and AlSb on GaAs: Structure of the Wetting Layers

Abstract

Thin layers of InSb, GaSb and AISh were grown on GaAs(O 0 1) by molecular beam epitaxy and characterized in situ with scanning tunneling microscopy. All three materials exhibit a Stranski-Krastanov growth mode. Distinct wetting layers and self-assembled quantum dots are present after deposition of one to four monolayers of (ln,Ga,Al)Sb. The wetting layers consist of anisotropic ribbon-like structures oriented along the [T 1 0] direction, with characteristic separations of 40-50 A. The initial GaAs surface reconstruction affects both the wetting layer structure and the quantum dot density.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1997
Accession Number
ADA482128

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • Lloyd J. Whitman
  • P. M. Thibado
  • Richard Magno

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Buildings And Structures
  • Crystal Growth
  • Crystals
  • Epitaxial Growth
  • Information Operations
  • Materials
  • Materials Laboratories
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Monomolecular Films
  • Quantum Dots

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing