X-Ray Diffraction Analysis of Lateral Composition Modulation in InAs/GaSb Superlattices Intended for Infrared Detector Applications

Abstract

Lateral compositional modulation in a (InAs)13/(GaSb)13 superlattice grown by molecular beam epitaxy for infrared detector applications has been investigated using high resolution X-ray diffraction. X-ray diffraction reciprocal space maps exhibit distinct lateral satellite peaks about the vertical superlattice peaks; however, the pattern is tilted with respect to the (001) direction. This tilt is directly related to the stacking of the layers as revealed by cross-sectional scanning tunnelling microscopy (XSTM) images. XSTM shows the morphology of the structure to consist of InAs- and GaSb-rich regions with a modulation wavelength of ~1200A and a lateral composition wavelength of 554 +/- 3 A. The modulation only occurs along one in-plane direction, resulting in InAs 'nanowires' along the [11 0] direction, which are several microns long.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2003
Accession Number
ADA482131

Entities

People

  • B. Z. Nosho
  • Brian R. Bennett
  • D. W. Stokes
  • J. H. Li
  • Lloyd J. Whitman
  • M. Goldenberg
  • R. L. Forrest
  • S. C. Moss

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Space

DTIC Thesaurus Topics

  • Crystal Lattices
  • Detectors
  • Diffraction
  • Diffraction Analysis
  • Films
  • High Resolution
  • Infrared Detectors
  • Materials
  • Military Research
  • Modulation
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Wires
  • Semiconductors
  • Superlattices
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Space