Stoichiometry-Induced Roughness on Antimonide Growth Surfaces

Abstract

Phase shifts in the intensity oscillation of reflection high-energy electron diffraction spots provide evidence for monolayer island formation on AlSb that is caused by sudden changes in surface stoichiometry. High-resolution scanning tunneling microscopy confirms the interpretation of the phase shift. These results are consistent with a previous structural assignment of the AlSb beta(4 x 3) and alpha(4 x 3) surface reconstructions and provide guidelines for producing smooth interfaces in antimonide-based heterostructures.

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Document Details

Document Type
Technical Report
Publication Date
Apr 23, 2001
Accession Number
ADA482188

Entities

People

  • Allan S. Bracker
  • B. Z. Nosho
  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • James C. Culbertson
  • Lloyd J. Whitman
  • W. Barvosa-carter

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Antimonides
  • Antimony
  • Diffraction
  • Electron Beams
  • Electron Diffraction
  • Epitaxial Growth
  • High Energy
  • High Resolution
  • Materials
  • Military Research
  • Phase Shift
  • Quantum Tunneling
  • Roughness
  • Scattering
  • Semiconductors
  • Stoichiometry
  • Tunnel Diodes

Fields of Study

  • Physics

Readers

  • Fluid Mechanics and Fluid Dynamics.
  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene