A RHEED and STM Study of Sb-Rich AlSb and GaSb (0 0 1) Surface Reconstructions
Abstract
The structure of AlSb and GaSb (0 0 1) surfaces prepared by molecular beam epitaxy has been studied with in-situ reflection high-energy electron diffraction and scanning tunneling microscopy. Under fixed Sb4 flux, two AlSb reconstructions are observed with increasing temperature (and decreasing surface Sb : Al coverage): c(4 * 4). as observed for InSb, GaAs, AlAs, and InAs, and (1 x 3). In contrast, GaSb reconstructions observed with increasing temperature are: 2 x 5), (1 x 5), c(2 x 6), and (1 x 3). Whereas the (1 x 5), c(2 x 6), and (1 x 3) surfaces are composed primarily of Sb dimer rows on top of an Sb-terminated surface, the (2 x 5) surface is composed of Sb dimer rows on top of two layers of Sb (i.e. the surface is terminated by three Sb layers). We speculate that GaSb is unique in forming the (n x 5) reconstructions due to its excellent lattice match with trigonally bonded elemental Sb.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1997
- Accession Number
- ADA482190
Entities
People
- Benjamin V. Shanabrook
- Brian R. Bennett
- Lloyd J. Whitman
- P. M. Thibado
Organizations
- United States Naval Research Laboratory