Self-Assembled InSb and GaSb Quantum Dots on GaAs(001)

Abstract

Quantum dots of InSb and GaSb were grown on GaAs(001) by molecular-beam epitaxy. In situ scanning tunneling microscopy measurements taken after 1-2 monolayers of InSb or GaSb growth reveal the surface is a network of anisotropic ribbon-like platelets. These platelets are a precursor to quantum dot growth. Transmission electron microscopy measurements indicate that the quantum dots are coherently strained. Quantum dots of InSb and GaSb capped by GaAs exhibit strong luminescence near 1.1 eV.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1996
Accession Number
ADA482191

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • Evan R. Glaser
  • Lloyd J. Whitman
  • M. E. Twigg
  • P. M. Thibado
  • Richard Magno

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystals
  • Diameters
  • Electron Microscopy
  • Electrons
  • Energy
  • Epitaxial Growth
  • Heterojunctions
  • Luminescence
  • Materials
  • Microscopy
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Quantum Dots
  • Scanning Electron Microscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing