Current Collapse Induced in AlGaN/GaN High-Electron-Mobility Transistors by Bias Stress

Abstract

Current collapse is observed to be induced in AlGaN/GaN high-electron-mobility transistors as a result of short-term bias stress. This effect was seen in devices grown by both metalorganic chemical vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). The induced collapse appears to be permanent and can be reversed by SiN passivation. The traps responsible for the collapse have been studied by photoionization spectroscopy. For the MOCVD-grown devices, the same traps cause the collapse in both unstressed and stressed devices. These effects are thought to result from hot-carrier damage during stress.

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Document Details

Document Type
Technical Report
Publication Date
Aug 25, 2003
Accession Number
ADA482208

Entities

People

  • A. E. Wickenden
  • D. D. Koleske
  • D. Scott Katzer
  • David F. Storm
  • J. A. Mittereder
  • J. A. Roussos
  • P. B. Klein
  • R. L. Henry
  • S. C. Binari

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Collapse
  • Compound Semiconductors
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Military Research
  • Mobility
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene