Anion Control in Molecular Beam Epitaxy of Mixed As/Sb III-V Heterostructures

Abstract

Superlattices consisting of As monolayers (MLs) in (In,Ga,Al)Sb and Sb MLs in (In,Ga,Al)As were grown by molecular beam epitaxy and characterized by x-ray diffraction, Raman spectroscopy, and high-resolution transmission electron microscopy. In all cases, well-defined superlattices were formed when the growth temperature was sufficiently low. As temperature increases for the As MLs in antimonides, substantial intermixing occurs. For Sb MLs in arsenides, Sb evaporation from the surface increases with increasing growth temperature. These results are discussed in the context of device heterostructures containing InAs/GaSb and InAs/AlSb heterojunctions.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1999
Accession Number
ADA482262

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • M. E. Twigg

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Space

DTIC Thesaurus Topics

  • Critical Temperature
  • Diffraction
  • Electron Microscopy
  • Electronics
  • Electrons
  • Epitaxial Growth
  • Heterojunctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Wells
  • Raman Spectroscopy
  • Scattering
  • Spectra
  • Spectroscopy
  • Transmission Electron Microscopy
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene