The Contribution of Antimonide Surface Reconstructions to Heterostructure Interface Roughness

Abstract

Using RHEED and STM, we have studied surface reconstructions and formation of islands and interfaces for the 6.1 Angstrom family of compound semiconductors (InAs, GaSb, AlSb). The structure and stoichiometry of MBE-grown antimonide surfaces lead to growth and roughening mechanisms that are distinctly different from other III-V materials. When a new material is grown on an antimonide surface, some blurring of the resulting heterointerface must occur in the form of monolayer islands or atomic-scale intermixing.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1999
Accession Number
ADA482272

Entities

People

  • Allan S. Bracker
  • B. Z. Nosho
  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • James C. Culbertson
  • Lloyd J. Whitman
  • M. J. Yang
  • W. Barvosa-carter

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Antimonides
  • Antimony
  • Compound Semiconductors
  • Crystal Growth
  • Detectors
  • Electron Diffraction
  • Electronics
  • Epitaxial Growth
  • Heterojunctions
  • Infrared Detectors
  • Materials
  • Military Research
  • Molecular Beam Epitaxy
  • Monomolecular Films
  • Roughness
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene