W-Structured Type-II Superlattice Long-Wave Infrared Photodiodes with High Quantum Efficiency

Abstract

Results are presented for an enhanced type-II W-structured superlattice (WSL) photodiode with an 11.3 micron cutoff and 34% external quantum efficiency (at 8.6 microns) operating at 80 K. The new WSL design employs quaternary Al0.4Ga0.49In0.11Sb barrier layers to improve collection efficiency by increasing minority-carrier mobility. By fitting the quantum efficiencies of a series of p-i-n WSL photodiodes with background-doped i-region thicknesses varying from 1 to 4 microns, the authors determine that the minority-carrier electron diffusion length is 3.5 microns. The structures were grown on semitransparent n-GaSb substrates that contributed a 35%-55% gain in quantum efficiency from multiple internal reflections.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2006
Accession Number
ADA482316

Entities

People

  • C. L. Canedy
  • E. H. Aifer
  • Eric M. Jackson
  • I. Vurgaftman
  • J. C. Kim
  • J. G. Tischler
  • J. R. Meyer
  • Jeffrey H. Warner
  • Lloyd J. Whitman
  • W. W. Bewley

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Weapons Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Crystal Lattices
  • Detectors
  • Diodes
  • Efficiency
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Long-Wavelength Infrared Radiation
  • Measurement
  • Mobility
  • Photodiodes
  • Quantum Efficiency
  • Semiconductors
  • Superlattices
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing