Synthesis, Characterization, Properties and Performance of Novel Direct Band Gap Semiconductors

Abstract

The work performed using support from this grant has focused on the following: (1) the development of ZrB2 buffer layers and Si-Ge-Sn compliant templates grown directly upon Si (100), and (2) the demonstration of these systems in mismatched heteroepitaxy of tetrahedral semiconductors including III-V compounds and group IV materials with Si substrates.

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Document Details

Document Type
Technical Report
Publication Date
May 08, 2007
Accession Number
ADA482349

Entities

People

  • John Kouvetakis

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Diffraction
  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • High Resolution
  • Low Temperature
  • Materials
  • Materials Science
  • Microscopy
  • Molecular Beam Epitaxy
  • Optical Properties
  • Semiconductors
  • Silicon Carbide
  • Substrates
  • Template Patterns
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Quantum Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics