Strain and Quantum Dots Manipulation in Nitride Compounds for Opto-electronic Devices

Abstract

Activities during the project period can be divided into two main areas. The first dealt with quantum structure and optical properties of light sources based on GaInN/AlInGaN quantum well structures. The second area covered research in the room temperature ferromagnetic properties of GaMnN dilute magnetic semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 2008
Accession Number
ADA482351

Entities

People

  • N. A. El-masry
  • S. M. Bedair

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Department Of Defense
  • Engineering
  • Heterojunctions
  • Light Emitting Diodes
  • Light Sources
  • Magnetic Properties
  • Military Research
  • North Carolina
  • Optical Properties
  • Optoelectronic Devices
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Students

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots