Development of Ultra Sensitive Piezoresistive Sensors Using AlAs 2D Electrons

Abstract

The electronic properties of the two-dimensional (2D) electron systems in modulation-doped AlAs quantum wells are investigated, with the goal of developing this material as a sensor with an unprecedented, large sensitivity to stress and/or strain. Such a sensor may find use in various scanning probe microscopes, and in other applications where minute amounts of variables such as force, displacement, or pressure need to be measured.

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Document Details

Document Type
Technical Report
Publication Date
Feb 14, 2008
Accession Number
ADA482354

Entities

People

  • Mansour Shayegan

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Sensors

DTIC Thesaurus Topics

  • Education
  • Electron Density
  • Electronics Industry
  • Electrons
  • Energy Bands
  • Engineering
  • Field Effect Transistors
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Measurement
  • Metal-Insulator Transitions
  • Quantum Wells
  • Semiconductors
  • Spin-Orbit Interaction
  • Students
  • Two Dimensional

Readers

  • Fluid Dynamics.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems
  • Quantum Computing