Defects and Related Carrier Traps in GaN AlGaN and Implanted SiC

Abstract

In this project, work has been performed on nine different topics: (1) Ultra-fast microwave annealing of ion-implanted 4H-SiC ; (2) Silicon carbide nanowires grown by a novel microwave heating-assisted physical vapor transport process; (3) Depth resolved X-ray determination of surface strain in free-standing films of HVPE-grown GaN and 71Ga NMR characterization (4) Effects of the surface and interface related defects in free-standing HVPE grown GaN films by high resolution X-ray diffraction measurements; (5) Bias stress induced instability in 4H-SiC DMOSFETs; (6) Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE; and (7) Power added efficiency and linearity tradeoffs in class AB biased GaN and GaAs microwave power HEMTs (8) High quality interlayer dielectric for 4H-SiC DMOSFETs; and (9)Thermally stable Ge/Cu/Ti ohmic contacts to n-type GaN. Important results on each topic are given in the attachment. We collaborated with Dr. Ken Jones of ARL on the topic: microwave annealing of implanted SiC .

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Document Details

Document Type
Technical Report
Publication Date
Oct 08, 2007
Accession Number
ADA482368

Entities

People

  • Venkata R. Mulpuri

Organizations

  • George Mason University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemistry
  • Compound Semiconductors
  • Crystal Lattices
  • Diffraction
  • Electronic Materials
  • Field Effect Transistors
  • High Resolution
  • High Temperature
  • Metal Oxide Semiconductors
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Solid State Electronics
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology